FIB | SEM | FIB | EDS | EELS | TEM Imaging

ACE Analytical Services

Our key services include TEM, Dual-Beam and FIB Circuit edit.

ACE provides advanced failure analysis and microscopy services that include Semiconductors, IP and litigation analysis, Automotive, Ceramics, Photonics, Glass, Batteries, Biotech & Medical, MEMS, solar LED, CdTe, CIGS, multi-junction, perovskite, infrared photodetectors, waveguides and AI.

We offer discounts for volume-work and quick turn-around without the “expedite fees”.

Dual-Beam (FIB-SEM) Services

High-resolution Scanning Electron SEM imaging
20nm-100nm TEM lamella sample preparation “lift-out”
ION beam nano-machining
FIB-SEM cross-section
Sample size – Up to 8”
Energy Dispersive Spectroscopy (EDS)
STEM

Transmission Electron Microscopy (TEM) Services

Sub-Å atomic resolution probe-corrected STEM mode imaging
Large area windowless EDS detector (0.45sr)
EELS & EDX quantification and mapping
Doping and material characterization analysis
Defect and Materials analysis
Tomography and holography
80, 200, 300kV accelerating voltages

Frontside & Backside FIB circuit edit Services

Advanced capabilities: 5nm FinFet, 7nm FinFET, 14/16nm FinFET, 28nm
Standard capabilities: 40nm, 45nm, 65nm, .13um, .18um, .25um, .35um
Wafer capabilities: 4″, 6″, 8″ and 12″ wafer
Over 50-years experience
Accommodation up to 12″ wafers
Free consultations & FIB layout design.
Backside sample preparation for FIB